SweGaN awarded €1.65 M Horizon2020 SME Instrument Grant

Pressmeddelande 2018-09-12

SweGaN was awarded a significant grant from the European Commission to execute its “CoolHEMT” project targeted to develop and commercialize SweGaN’s revolutionary gallium nitride (GaN) on silicon carbide (SiC) structures into high frequency devices. SweGaN’s disruptive QuanFINE^TMstructure substantially improves the performance of high frequency devices used in the communication network and enables high frequency phased array communication modules.

SweGaN has been awarded a European Commission grant in the ultra-competitive Horizon 2020 SME instrument programme, where 1280 companies applied to the second round of the European Innovation Council (EIC) pilot. Only 130 companies were invited to pitch their innovation projects in front of a panel of experts who selected just 65 companies for funding.

The funding will be used to strengthen SweGaN’s team and to develop prototype devices taking full advantage of SweGaN’s proprietary GaN-on-SiC growth technology. The QuanFINE^TMstructure is the latest innovation coming from SweGaN which builds on SweGaN’s high precision interface control during the initial stages of growth.

“We are extremely happy to receive this grant especially in such stiff competition. The grant will help us to accelerate the development and commercialization of the QuanFINE^TMstructure into finished devices that can be tested by our partners developing the next generation communication systems for the 5G network,” says Olof Kordina, CEO of SweGaN AB.

High electron mobility transistor (HEMT) devices made on the QuanFINE^TMstructure has already demonstrated a higher power density, lower dispersion, and substantially better thermal management compared to devices made on commercial state-of-the-art GaN-on-SiC material. These advantages are instrumental for the next-generation communication network and for satellite communication.

“In addition to RF applications, we also see a great potential of our QuanFINE^TMstructure for power devices, based on its extraordinarily high breakdown voltage.” says Jr-Tai Chen, CTO of SweGaN AB.

The winning proposal was developed by Zaz Ventures, a specialized consultancy focusing on Horizon 2020 grant proposal writing. Xavier Aubry, managing partner of Zaz Ventures, commented: “Base stations are by far the largest power consumer within mobile networks, accounting for 80% of the total network energy consumption. SweGaN’s technology for GaN-on-SiC power amplifiers can reduce cost and improve energy efficiency to support the explosive growth of mobile data while limiting its carbon footprint”.

För mer information, kontakta,
Olof Kordina, VD och grundare på SweGaN, nås på +46 70 495 0594 eller olof.kordina@swegan.se

Om SweGaN
SweGaN is a Swedish manufacturer of custom-made epitaxial wafers with revolutionary technology. We aim at becoming the world leading supplier of group III-nitride materials, especially for high electron mobility transistors (HEMTs). We believe that our materials’ ground-breaking performance will allow you to meet the challenges of the next generation of high power and high frequency devices. https://swegan.se